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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.4 Ampere APPLICATION * Low power rectification CH495N1PT FEATURE * Small surface mounting type. (FBPT-923) * Two diode with common cathode for excellent. * High reliability 0.37(REF.) 0.50.05 1.00.05 FBPT-923 CONSTRUCTION * Silicon epitaxial planar 0.25(REF.) 0.050.04 1.00.05 0.680.05 0.420.05 CIRCUIT (2) (1) 0.30.05 0.260.05 Dimensions in millimeters (3) FBPT-923 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current at 8.3 mSec single half sine-wave Typical Junction Capacitance between Terminal (Note 1) Maximum Operating Temperature Range Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ TSTG CH495N1PT 40 28 25 0.4 2.0 20 +125 -40 to +125 UNITS Volts Volts Volts Amps Amps pF o C C o ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Maximum Instantaneous Forward Voltage at IF(1)= 10mA Maximum Instantaneous Forward Voltage at IF(2)= 200mA Maximum Average Reverse Current at VR= 25V SYMBOL VF(1) VF(2) IR CH495N1PT 0.30 0.50 70 UNITS Volts Volts uAmps 2006-07 NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 10.0 volts. 2. ESD sensitive product handling required. RATING CHARACTERISTIC CURVES ( CH495N1PT ) FIG. 1 - FORWARD CHARACTERISTICS 100m FORWARD CURRENT, (A) 1 REVERSE CURRENT, (A) 10m 1m o 75 C o Ta=125 C FIG. 2 - REVERSE CHARACTERISTICS 100m 10m 1m 100u 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 75 o C 25 o C -40 o C 2 =1 Ta 5 o C 100u o 25 C 10u 1u 0 10 o 0C 20 REVERSE VOLTAGE, (V) 30 40 FORWARD VOLTAGE, (V) FIG. 3 - TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE, (pF) 10 1 0 5 10 15 20 25 30 35 REVERSE VOLTAGE, (V) |
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